Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer
نویسندگان
چکیده
منابع مشابه
Interaction of Oxygen with Threading Dislocations in GaN
A review is given of the results of first principles calculations used to investigate the structures and electronic properties of screw and edge dislocations in GaN. The atoms at the core of the full core screw dislocation possess heavily strained bonds leading to deep gap states. Removing the first shell of Ga and N atoms gives a screw dislocation with a small open core consisting of f10 10g t...
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ژورنال
عنوان ژورنال: physica status solidi (b)
سال: 2020
ISSN: 0370-1972,1521-3951
DOI: 10.1002/pssb.202070019